Thin crystalline silicon (C-Si) solar cell is expected to be a low price energy source by decreasing
the consumption of Si. However, thin c-Si solar cell entails the bowing and crack issues in high
temperature manufacturing process. Thus, the conventional tabbing process, based on high
temperature soldering (> 250°C), has difficulties for applying to thin c-Si solar cell modules. In
this paper, a conductive paste (CP) based interconnection process has been proposed to fabricate
thin c-Si solar cell modules with high production yield, instead of existing soldering materials.
To optimize the process condition for CP based interconnection, we compared the performance
and stability of modules fabricated under various lamination temperature (120, 150, and 175°C).
The power from CP based module is similar to that with conventional tabbing process, as
modules are fabricated. However, the output of CP based module laminated at 120°C decreases
significantly (14.1% for Damp heat and 6.1% for thermal cycle) in harsh condition, while the
output drops only in 3% in the samples process at 150°C, 175°C. The peel test indicates that the
unstable performance of sample laminated at 120°C is attributed to weak adhesion strength (1.7
N) between cell and ribbon compared to other cases (2.7 N). As a result, optimized lamination
temperature for CP based module process is 150°C, considering stability and energy consumption
during the fabrication.