Effect of Plasma Enhancement on the Al-doped ZnO Thin Film Synthesis by MOCVD

Seomoon Kyu

doi:10.7836/kses.2019.39.1.033

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2019 Vol.39, Issue 1 Preview Page Next Page

Research Article

Effect of Plasma Enhancement on the Al-doped ZnO Thin Film Synthesis by MOCVD 유기금속화학기상증착법에 의한 ZnO:Al 필름 합성에서 플라즈마 인가 효과

28 February 2019. pp. 33-40

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Abstract

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from 9.5×10^-1 to 8.0×10^-3 Ωcm when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to 7.0×10^-4 Ωcm at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

Keywords

AZO

PE-MOCVD

TCO

indirect plasma

키워드

알루미늄 도핑된 산화아연

플라즈마향상 유기금속화학기상증착법

투명전도성산화막

간접플라즈마

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Information

Publisher :Korean Solar Energy Society
Publisher(Ko) :한국태양에너지학회
Journal Title :Journal of the Korean Solar Energy Society
Journal Title(Ko) :한국태양에너지학회 논문집
Volume : 39
No :1
Pages :33-40
Received Date : 2018-12-20
Revised Date : 2019-01-01
Accepted Date : 2019-01-14
DOI :https://doi.org/10.7836/kses.2019.39.1.033

Journal of the Korean Solar Energy Society ISSN:1598-6411(Print) 2508-3562(Online) 한국태양에너지학회 논문집

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